Semiconductor device and a method of manufacturing thereof

ABSTRACT

A semiconductor device comprises a semiconductor die, comprising a stacking structure, a first bonding pad, and a second bonding pad on a top surface of the stacking structure, wherein a shortest distance between the first bonding pad and the second bonding pad is less than 150 μm; a carrier comprising a connecting surface; a third bonding pad and a fourth bonding pad on the connecting surface of the carrier; and a conductive connecting layer comprising a current conductive area between the first bonding pad and the third bonding pad and between the second bonding pad and the fourth bonding pad.

TECHNICAL FIELD

This present application relates to a semiconductor device, moreparticularly relates to a connecting structure of the semiconductordevice and a method of manufacturing the semiconductor device.

DESCRIPTION OF BACKGROUND ART

The present disclosure provides a semiconductor device comprises III-Vgroup elements, such as gallium phosphide (GaP), gallium arsenide (GaAs)or gallium nitride (GaN). The semiconductor device could belight-emitting device (LED), power device or solar cell, wherein the LEDcomprises a p-type semiconductor layer, an n-type semiconductor layerand an active region between the p-type semiconductor layer and then-type semiconductor layer. When applying an electric field, electronsand holes provided by the n-type semiconductor layer and the p-typesemiconductor layer recombine in the active region and the electricalenergy is transferred to the optical energy.

In order to enhance the electrical efficiency and the heat dissipationefficiency, the flip chip type LED is produced. However, the yield ofmanufacturing the flip chip type LED by the conventional method isdecreased and the reliability of the flip chip type LED may also beaffected for being incorporated in the compact electrical product.

SUMMARY OF THE DISCLOSURE

The present disclosure provides a semiconductor device comprising asemiconductor die, comprising a stacking structure, a first bonding pad,and a second bonding pad on a top surface of the stacking structure,wherein a shortest distance between the first bonding pad and the secondbonding pad is less than 150 μm; a carrier comprising a connectingsurface; a third bonding pad and a fourth bonding pad on the connectingsurface of the carrier; and a conductive connecting layer comprising acurrent conductive area between the first bonding pad and the thirdbonding pad and between the second bonding pad and the fourth bondingpad.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a schematic drawing of a semiconductor device in the presentdisclosure.

FIG. 2 shows a cross section of a semiconductor device in accordancewith the first embodiment of the present disclosure.

FIG. 3 shows a cross section of a semiconductor device in accordancewith the second embodiment of the present disclosure.

FIG. 4 shows a cross section of a semiconductor device in accordancewith the third embodiment of the present disclosure.

FIG. 5 shows a semiconductor device in accordance with the fourthembodiment of the present disclosure.

FIG. 6 shows a cross section of the semiconductor device along the linea-a′ shown in FIG. 5.

FIG. 7 shows a flow chart of a method of manufacturing the semiconductordevice disclosed in the present disclosure.

FIG. 8 shows a cross section of a semiconductor device in accordancewith the fifth embodiment of the present disclosure.

FIG. 9 shows a cross section of a semiconductor device in accordancewith the sixth embodiment of the present disclosure.

FIG. 10 shows a top view of a light-emitting module including thesemiconductor device disclosed in the present disclosure.

FIG. 11 shows a cross section of another light-emitting module includingthe semiconductor device disclosed in the present disclosure.

FIG. 12 shows the light-emitting module including the semiconductordevice disclosed in the present disclosure.

FIG. 13 shows a cross section of a semiconductor die incorporated in thesemiconductor device disclosed in the present disclosure.

FIG. 14 shows a cross section of another semiconductor die incorporatedin the semiconductor device disclosed in the present disclosure.

DETAILED DESCRIPTION OF THE PRESENT DISCLOSURE

The embodiment of the application is illustrated in detail, and isplotted in the drawings. The same or the similar parts are illustratedin the drawings and the specification with the same reference numeral.

FIG. 1 shows a schematic drawing of the semiconductor device 100disclosed in the present disclosure. The semiconductor device 100comprises a semiconductor die 1 and a carrier 2. A conductive connectinglayer 3 locates between the semiconductor die 1 and the carrier 2 toelectrically connect the semiconductor die 1 with the carrier 2. Thesemiconductor die 1 comprises a first bonding pad 112 and a secondbonding pad 113, and the carrier 2 comprises a third bonding pad 22 anda fourth bonding pad 23. The conductive connecting layer 3 comprises acurrent conductive area 31 and a current blocking area 32, and thecurrent conductive area 31 locates between the first bonding pad 112 andthe third bonding pad 22, and between the second bonding pad 113 and thefourth bonding pad 23.

More specifically, the semiconductor die 1 is formed by cutting asemiconductor wafer during manufacturing procedure. To fit in thecompact electronic products, the semiconductor die 1 disclosed in oneembodiment of the present disclosure could have a size smaller than 150mil², for example. On the other hand, a shortest distance d between thefirst bonding pad 112 and the second bonding pad 113 is less than 150μm, such as the shortest distance d is between 50 μm and 100 μm. Thesemiconductor die 1 can be light-emitting diode, a power device or asolar cell. The semiconductor die 1 comprises a stacking structure 11having a top surface 111, the first bonding pad 112 and the secondbonding pad 113 on the top surface 111. The first bonding pad 112comprises a first bonding surface 112 a substantially parallel with thetop surface 111 of the semiconductor die 1. The first bonding surface112 a comprises a first normal direction a1 perpendicular with the firstbonding surface 112 a. Generally, the first bonding surface 112 a haslarger area than the other surfaces of the first bonding pad 112, and amaterial of the outer surfaces of the first bonding pad 112 and thesecond bonding pad 113 can be gold (Au), silver (Ag), copper (Cu), tin(Sn), nickel (Ni) or an alloy of the above metals. In one embodiment,the semiconductor die 1 can be a bare semiconductor die without packagematerial, a die with phosphor layer conformably formed on a surface ofbare semiconductor die, or a die with package material formed by chipscale package (CSP) technology.

In FIG. 1, the carrier 2 comprises a connecting surface 21, the thirdbonding pad 22 and the fourth bonding pad 23 located on the connectingsurface 21 and protruded from the connecting surface 21. The thirdbonding pad 22 comprises a second bonding surface 22 a substantiallyparallel to the connecting surface 21 of the carrier 2, and the secondbonding surface 22 a has larger area than the other surfaces of thethird bonding pad 22. A material of the outer surfaces of the thirdbonding pad 22 and the fourth bonding pad 23 can be gold (Au), silver(Ag), copper (Cu), tin (Sn), nickel (Ni) or an alloy of the abovemetals. The third bonding pad 22 and the fourth bonding pad 23substantially align to the first bonding pad 112 and the second bondingpad 113 respectively. In one embodiment, after connecting thesemiconductor die 1 and the carrier 2 through the conductive connectinglayer 3, the first normal direction a1 of the first bonding pad 112 issubstantially parallel to the second normal direction a2 of the thirdbonding pad 22. That is, the first bonding pad 112 and the secondbonding pad 113 face the third bonding pad 22 and the fourth bonding pad23 respectively when bonding the semiconductor die 1 and the carrier 2via the conductive connecting layer 3 in order to enable the current toflow between the semiconductor die 1 and the carrier 2. Morespecifically, there is an angle between the first normal direction a1and the second normal direction a2, and the angle is between 160 degreesto 200 degrees. To be more specific, the angle is 180 degrees. Inanother embodiment, after connecting the semiconductor die 1 and thecarrier 2 through the conductive connecting layer 3, a distance betweenthe top surface 111 of the stacking structure 11 and the connectingsurface 21 of the carrier 2 is preferably less than 60 μm in order toeffectively decrease the height of the semiconductor device 100 forfitting the compact device and thinner device. The carrier 2 isdesignated to electrically connect to an external power supplier. Forexample, the carrier 2 can be a packaging carrier or printed circuitboard (PCB). The current flows to the conductive connecting layer 3through the third bonding pad 22 and the fourth bonding pad 23 of thecarrier 2, and then passes to the semiconductor die 1 via the firstbonding pad 112 and the second bonding pad 113 to drive thesemiconductor die 1.

FIG. 2 shows a cross section of the semiconductor device 100 inaccordance with the first embodiment of the present disclosure. Thecurrent conductive area 31 locates between the first bonding pad 112 andthe third bonding pad 22, and between the second bonding pad 113 and thefourth bonding pad 23. The current blocking area 32 locates outside ofthe current conductive area 31. For example, the current blocking area32 locates between the top surface 111 of the stacking structure 11,which is devoid of the first bonding pad 112 and the second bonding pad113, and the connecting surface 21 of the carrier 2, which is devoid ofthe third bonding pad 22 and the fourth bonding pad 23. In other words,the current blocking area 32 is defined by the first bonding pad 112,the second bonding pad 113, the third bonding pad 22, the fourth bondingpad 23, the top surface 111 of the stacking structure 11 and theconnecting surface 21 of the carrier 2. The current blocking area 32,for example, surrounds and covers the current conductive area 31. In thefirst embodiment, the top surface 111 of the semiconductor die 1 issubstantially parallel to the connecting surface 21 of the carrier 2 andthe structure of the semiconductor device 100 is described above.Besides, in order to decrease the overall thickness of the semiconductordevice 100, a thickness of the current conductive area 31 can be lessthan 40 μm. That is, the distance between the first bonding pad 112 andthe third bonding pad 22, or the distance between the second bonding pad113 and the fourth bonding pad 23 is less than 40 μm for being able tobe incorporated in the compact semiconductor device. The conductiveconnecting layer 3 comprises a conductive material C1 and an insulatingmaterial I1, and the current conductive area 31 and the current blockingarea 32 comprise different contents of the conductive material C1. Morespecifically, a content of the conductive material C1 in the currentconductive area 31 is higher than that in the current blocking area 32.For example, in the first embodiment shown in FIG. 2, the content of theconductive material C1 in the current conductive area 31 is between 7%and 75%, and preferably between 15% and 30%. The content of theconductive material C1 in the current blocking area 32 is between 2% and50%, and preferably between 3% and 10%. It should be noted that, “thecontent of the conductive material C1” in the disclosure is defined tobe the content of the conductive material in a specific area in a crosssection view of microscopic image of the semiconductor device 100.Particularly, the “content” of the conductive material C1 is defined bythe percentage of a total area of the conductive material C1 in aspecific area such as the current blocking area 32 or the currentconductive area 31 in the cross-section microscopic image of thesemiconductor device 100. For example, the total area of the conductivematerial C1 in the current blocking area 32 is A, and a total area ofthe current blocking area 32 is B, and the content of the conductivematerial C1 in the current blocking area 32 is (A/B)×100%. The abovedefinition can also be suitable to define “the content of the conductivematerial” in the following disclosure.

In FIG. 2, the shape of the conductive material C1 in the firstembodiment is sphere or granular. The content of the conductive materialC1 in the current conductive area 31 is between 7% and 75% so the firstbonding pad 112 electrically connects to the third bonding pad 22 andthe second bonding pad 113 electrically connects to the fourth bondingpad 23 via the conductive material C1, and therefore, the current flowsto the semiconductor die 1 from the carrier 2. Moreover, the currentblocking area 32 comprises a small amount of the conductive material C1,and the quantity of the conductive material C1 is not sufficient to formconductive connection between the semiconductor die 1 and the carrier 2via the current blocking area 32. The content of the conductive materialC1 in the current blocking area 32 can be between 2% and 50%, andpreferably between 3% and 10%. More specifically, the electricalconnection cannot be formed due to insufficient conductive material C1between the first bonding pad 112 and the second bonding pad 113,between the third bonding pad 22 and the fourth bonding pad 23, betweenthe first bonding pad 112 and the fourth bonding pad 23, and between thethird bonding pad 22 and the second bonding pad 113. Therefore, thesemiconductor die 1 is electrically isolated to the carrier 2 in thecurrent blocking area 32 for avoiding current shortage caused by currentflows between the first bonding pad 112 and the second bonding pad 113,and between the third bonding pad 22 and the fourth bonding pad 23.

Furthermore, the conductive material C1 can be metal or alloy with amelting point higher than 300° C., such as gold (Au), copper (Cu),aluminum (Al), nickel (Ni), silver (Ag), or the alloy composed at leasttwo metals described above. The insulating material I1 can bethermosetting or thermoplastic polymer. For example, the insulatingmaterial I1 can be epoxy, silicone, poly(methyl 2-methylpropenoate) andepisulfide. In the present embodiment, the insulating material I1 is athermosetting material and having a curing temperature, and the meltingpoint of the conductive material C1 is higher than the curingtemperature of the insulating material I1. Moreover, a structure of theconductive material C1 in the embodiment is granular and comprises agrain size which defined by a diameter of the conductive material C1.The grain size can be between 5 μm to 50 μm. The shortest distance dbetween the first bonding pad 112 and the second bonding pad 113 ispreferably more than double of the grain size to prevent the currentshortage caused by the conductive material C1 contacts to the firstbonding pad 112 and the second bonding pad 113 when conducting a heatingstep and/or a pressurizing step in the procedure of manufacturing thesemiconductor device 100. As described above, the shortest distance d isnot more than 150 μm for being able to be incorporated in the compactelectrical product. The conductive material C1 can be a core-shellstructure. In one embodiment, the conductive material C1 comprises aconductive core and a insulating layer covering the conductive core,wherein the material of the insulating layer is not limited to be thesame or different from the insulating material I1. In anotherembodiment, the conductive material C1 comprises an insulating core anda conductive layer covering the insulating core.

FIG. 3 shows a cross section of a semiconductor device 100 in accordancewith the second embodiment of the present disclosure. The conductiveconnecting layer 3 comprises a conductive material C2 and an insulatingmaterial I2, and the current conductive area 31 and the current blockingarea 32 comprise different contents of the conductive material C2. Thecontent of the conductive material C2 in the current conductive area 31is higher than 75%, or the current conductive area 31 is preferablydevoid of the insulating material I2. The content of the conductivematerial C2 in the current blocking area 32 is lower than 40% but notequal to zero. That is, the current blocking area 32 comprises smallamount of the conductive material C2. For example, the content of theconductive material C2 in the current blocking 32 is between 0.1% and40%, and preferably between 2% and 10%. The content of the insulatingmaterial I2 in the current blocking area 32 is higher than 60%, andpreferably between 60% and 99.9%, and more preferably between 90% and98%. In one embodiment, the current blocking area 32 comprises 10% to40% of conductive material C2 and 60% to 90% of insulating material I2,and preferably, the current blocking area 32 comprises 20% to 30% ofconductive material C2 and 70% to 80% of insulating material I2. Itshould be noted that, the elements of the semiconductor device 100 andthe connection thereof in the present embodiment is similar with that ofthe first embodiment shown in FIG. 2, however, the content of theconductive material C2 in the current blocking area 32 in the presentembodiment is lower than that of the conductive material C1 in thecurrent blocking area 32 in the first embodiment. Under thecircumstances, the current is much harder to pass the current blockingarea 32 in the second embodiment than in the first embodiment. Thedispersion of the conductive material C2 in the current blocking area 32shown in FIG. 3 is much sparser than that of the conductive material C1in the current blocking area 32 shown in FIG. 2, and therefore, a betterblocking effect can be achieved in the second embodiment since the lowerquantity of the conductive material C2 in the current blocking area 32is unable to form electrical connection between the first bonding pad112 and the second bonding pad 113, between the third bonding pad 22 andthe fourth bonding pad 23, between the first bonding pad 112 and thefourth bonding pad 23, and between the second bonding pad 113 and thethird bonding pad 22.

More specifically, the conductive material C2 comprises a metal or analloy with a melting point lower than 300° C., such as bismuth (Bi), tin(Sn), silver (Ag) or indium (In), or the alloy composed of at least twometals described above, for example Sn—Bi—Ag alloy. When the conductivematerial C2 is an alloy, the melting point of the conductive material C2means the eutectic point of the alloy. The insulating material I2 can bea thermosetting polymer, such as epoxy, silicone, poly(methyl2-methylpropenoate) and episulfide. The insulating material I2 has acuring temperature, and the melting point of the conductive material C2is lower than the curing temperature of the insulating material I2 inthe present embodiment. The method of manufacturing the semiconductordevice 100 comprises a heating step, and the detail steps will bedescribed later. Before heating the conductive connecting layer 3, astructure of the conductive material C2 in the conductive connectinglayer 3 is granular and comprises a grain size of between 5 μm and 50μm, for example. The shortest distance d between the first bonding pad112 and the second bonding pad 113 is preferably more than or equal todouble of the grain size, and not more than 150 μm. The reason for thespecific value of the shortest distance d is already presented above. Inone embodiment, the conductive material C2 comprises a first metal and asecond metal, and more specifically, the single grain of the conductivematerial C2 comprises the first metal and the second metal, and amelting point of the first metal is lower than that of the second metal.Besides, a content of the first metal is lower than that of the secondmetal in the single grain of the conductive material C2. For example,the single grain of the conductive material C2 comprises 42 wt % of thefirst metal and 58 wt % of the second metal. In one embodiment, thefirst metal is tin (melting point is about 231° C.) and the second metalis bismuth (melting point is about 271° C.), and the melting point ofthe conductive material C2 is the eutectic point of the two metal, whichis about 139° C. In another embodiment, the conductive material C2 isSn—Ag—Cu alloy, and the melting point of the alloy is about 217° C. Inanother embodiment, the conductive material C2 is a core-shell structureand comprises an insulating core and a metal layer covering theinsulating core. The material of the insulating core can but not limitedto be the same as or different from the insulating material 12.

It should be noted that, the shape of the conductive material C2 in thecurrent conductive area 31 is bulk, and the shape of the conductivematerial C2 is granular in the current blocking area 32 in thesemiconductor device 100 of the second embodiment shown in FIG. 3.However, the shape of the conductive material C2 in the currentconductive area 31 is granular, so as the shape of the conductivematerial C2 in the current blocking area 32 is in the semiconductordevice 100 of the first embodiment shown in FIG. 2. More specifically,the conductive material C2 in the current conductive area 32 forms acontinuous dispersion between the first bonding pad 112 and the thirdbonding pad 22, and the second bonding pad 113 and the fourth bondingpad 23 in the second embodiment. Comparing to the conductive material C1in the current conductive area 32 in the first embodiment, theconductive material C2 is more impact and comprises less voids or almostno void in the current conductive area 32 in the second embodiment. Theconductive material C2 with bulk shape is produced by heating and/orpressurizing the conductive material C2 with granular shape, and theoriginal (granular) conductive material C2 melts during the heatingand/or pressurizing steps, so that the conductive material C2 formscontinuous dispersion between the bonding pads 112, 22, and the bondingpads 113, 23. On the contrary, the current conductive area 32 in thefirst embodiment is formed by physical contact of the conductivematerial C1, and therefore the current conductive area 32 in the firstembodiment comprises several voids since the conductive material C1 isdevoid of melting and mixing together. The different shapes anddispersity mechanisms of the conductive material C1, C2 in the twoembodiments is attributed to the difference of the material of theconductive connecting layer 3. The dispersity mechanisms will beintroduced in the later paragraph.

FIG. 4 shows a cross section of a semiconductor device 100 in accordancewith the third embodiment of the present disclosure. The elements of thesemiconductor device 100 and the connection thereof in the presentembodiment are similar with that of the second embodiment. However, thesemiconductor device 100 in the present embodiment further comprises areflective wall 24 protruding from the connecting surface 21 of thecarrier 2. The reflective wall 24 surrounds the third bonding pad 22 andthe fourth bonding pad 23, and the reflective wall 24 and the connectingsurface 21 of the carrier 2 collectively define a concave 25 surroundedby them. The semiconductor die 1 locates in the concave 25. When thesemiconductor die 1 is a light-emitting die (the light-emitting die canbe a light-emitting diode), the reflective wall 24 has the reflectivityhigher than 80% to reflect a light emitted by the light-emitting die.The reflective wall 24 achieves high reflectivity to light by its ownmaterial or structure. Alternatively, the reflective wall 24 has highreflectivity to the light emitted by the light-emitting die throughcoating a reflective material on a surface facing the concave 25.Therefore, the light emitted by the light-emitting die can beconcentrated and the luminance of the light-emitting die can beincreased. The material of the reflective wall 24 comprises metal, alloyor silicone mixed with reflective particles, wherein the reflectiveparticles comprise silicon oxide (SiO_(x)), tin oxide (TiO_(x)) or boronnitride (BN).

FIG. 5 shows a cross section of a semiconductor device 100 in accordancewith the fourth embodiment of the present disclosure. The semiconductordevice 100 comprises a semiconductor die 1, a carrier 2 and a conductiveconnecting layer 3 between the semiconductor die 1 and the carrier 2 toenable the current to flow between the semiconductor die 1 and thecarrier 2. The semiconductor die 1 comprises a top surface 111, a firstbonding pad 112 and second bonding pad 113 on the top surface 111. Thecarrier 2 comprises a connecting surface 21, a third bonding pad 22 andfourth bonding pad 23 on the connecting surface 21. The conductiveconnecting layer 3 comprises a current conductive area 31 and a currentblocking area 32. The current conductive area 31 locates between thefirst bonding pad 112 and the third bonding pad 22, and between thesecond bonding pad 113 and fourth bonding pad 23. The current blockingarea 32 locates outside of the current conductive area 31. The elementsof the semiconductor device 100 and the connection thereof in thepresent embodiment are similar with that shown in the second embodiment.For example, the semiconductor device 100 in the fourth embodiment, thefirst bonding pad 112 comprises a first bonding surface 112 a, and thethird bonding pad 22 comprises a second bonding surface 22 a. The firstbonding surface 112 a and the second bonding surface 22 a aresubstantially and respectively parallel with the top surface 111 of thesemiconductor die 1 and the connecting surface 21 of the carrier 2. Thecurrent conductive area 31 locates between the first bonding surface 112a and the second bonding surface 22 a. However, the difference betweenthe present embodiment and the second embodiment is the relationship ofthe first bonding surface 112 a of the first bonding pad 112 of thesemiconductor die 1 and the second bonding surface 22 a of the thirdbonding pad 22 of the carrier 2. More specifically, the top surface 111of the semiconductor die 1 is substantially parallel with the connectingsurface 21 of the carrier 2, and the first normal direction a1 of thefirst bonding pad 112 is substantially parallel with the second normaldirection a2 of the third bonding pad 22 in the second embodiment.However, in the fourth embodiment, the top surface 111 of thesemiconductor die 1 is not parallel with the connecting surface 21 ofthe carrier 2, or the top surface 111 of the semiconductor die 1 isperpendicular with the connecting surface 21 of the carrier 2. In FIG.6, the first bonding surface 112 a of the first bonding pad 112comprises a first normal direction a1, and the second bonding surface 22a of the third bonding pad 22 comprises a second normal direction a2. Afirst angle θ1 between the first normal direction a1 and the secondnormal direction a2 is not 180 degrees. For example, the first angle θ1is about between 60 and 150 degrees, and preferably between 80 and 100degrees. More preferably, the first angle θ1 is about 90 degrees. In thesemiconductor device 100 of the present embodiment, though there is thefirst angle θ1 described above formed between the first normal directiona1 and the second normal direction a2 because the top surface 111 of thesemiconductor die 1 is not parallel with the connecting surface 21 ofthe carrier 2, the conductive connecting layer 3 can still be formedbetween the semiconductor die land the carrier 2. Consequently, thecurrent can flow between the first bonding pad 112 and the third bondingpad 22, and between the second bonding pad 113 and the fourth bondingpad 23. In the meantime, a thickness of the semiconductor device 100 canbe effectively reduced. The semiconductor device 100 can be applied inthe backlight module application which has strict requirement of thevolume of the semiconductor device 100.

FIG. 6 shows a cross section of the semiconductor device 100 along theline a-a′ shown in FIG. 5. More specifically, the semiconductor die 1 inthe present embodiment comprises a first side surface 114 and a secondside surface 115 opposite to the first side surface 114. The first sidesurface 114 and the second side surface 115 connect to the top surface111, and the first side surface 114 is farer to the carrier 2 than thesecond side surface 115 is. The second side surface 115 faces andconnects to the connecting surface 21 of the carrier 2. Thesemiconductor die 1 further comprises a main light-extracting face 116connecting to the first side surface 114 and the second side surface115. The conductive connecting layer 3 locates between the connectingsurface 21 of the carrier 2 and the top surface 111 of the semiconductordie 1, wherein the current conductive area 31 of the conductiveconnecting layer 3 locates between the first bonding pad 112 and thethird bonding pad 22, and between the second bonding pad 113 and fourthbonding pad 23. The current blocking area 32 is outside of the currentconductive area 31 of the conductive connecting layer 3, and the currentblocking area 32 preferably covers the outer side of the currentconductive area 31. In FIG. 6, the current conductive area 31 comprisesa first conducting part 311 and a second conducting part 312. The firstconducting part 311 locates between the first bonding pad 112 and thethird bonding pad 22, and between the second bonding pad 113 and thefourth bonding pad 23, and the second conducting part 312 locatesbetween a side surface 112 b of the first bonding pad 112 and the thirdbonding pad 22, and a side surface (not shown) of the second bonding pad113 and the fourth bonding pad 23. The side surface 112 b of the firstbonding pad 112 connects to the first bonding surface 112 a and thesecond side surface 115, and preferably, the first conducting part 311connects to the second conducting part 312. The current blocking area 32comprises a first insulating part 321, a second insulating part 322, anda third insulating part 323. The first insulating part 321 locates amongthe top surface 111 which is devoid of the first bonding pad 112 and thesecond bonding pad 113, the connecting surface 21 which is devoid of thethird bonding pad 22 and the fourth bonding pad 23, and the currentconductive area 31. The second insulating part 322 covers the outer sideof the current conductive area 31 (shown in FIG. 6). The thirdinsulating part 323 locates between the second side surface 115 and thesecond bonding surface 22 a and is adjacent and connects to the secondconducting part 312. More preferably, the first insulating part 321 ofthe current blocking area 32 connects to the second insulating part 322and the third insulating part 323. Similar to the second embodiment, theconductive connecting layer 3 comprises a conductive material C3 and aninsulating material I3. The contents of the conductive material C3 inthe current conductive area 31 and the current blocking area 32 aredifferent, and the content of the conductive material C3 in the currentconductive area 31 is more than that in the current blocking area 32. Inone embodiment, the content of the conductive material C3 in the currentconductive area 31 is higher than 75%, and the content of the conductivematerial C3 in the current blocking area 32 is preferably lower than40%. For example, the content of the conductive material C3 in thecurrent blocking area 32 is between 0.1% and 40%, or between 2% and 10%.The conductive material C3 and insulating material I3 in the presentembodiment are preferably the same as the conductive material C2 and theinsulating material I2 in the second embodiment respectively. FIG. 6shows a connection of the current conductive area 31 and the firstbonding pad 112 or the second bonding pad 113 of the semiconductor die 1comprises a highest height H, and a connection of the current conductivearea 31 and the third bonding pad 22 or fourth bonding pad 23 of thecarrier 2 comprises a widest width W. In one embodiment, the highestheight H is between 130 μm and 200 μm, and the widest width W is between150 μm and 300 μm. The contents of the insulating material 13 in thefirst insulating part 321, the second insulating part 322, and the thirdinsulating part 323 are more than 60%, and preferably between 60% and99.9%, and more preferably between 90% and 98%. In one embodiment of thedisclosure, the second insulating part 322 and the third insulating part323 are devoid of the conductive material C3. In one embodiment of thedisclosure, the second conducting part 312 comprises the insulatingmaterial I3.

FIG. 7 shows a flow chart of a method of manufacturing the semiconductordevice 100 disclosed in the present disclosure, which comprises thefollowing steps:

Step a. preparing a semiconductor die 1 comprising a stacking structure11, a first bonding pad 112, and a second bonding pad 113 on a topsurface 111 of the stacking structure 11, wherein a shortest distancebetween the first bonding pad 112 and the second bonding pad 113 is lessthan 150 μm;

Step b. preparing a carrier 2 comprising a connecting surface 21, athird bonding pad 22 and a fourth bonding pad 23 on a connecting surface21 of the carrier 2;

Step c. coating a conductive agent on the top surface 111 of thesemiconductor die 1 or the connecting surface 21 of the carrier 2,wherein the conductive agent covers the first bonding pad 112 and thesecond bonding pad 113, or the conductive agent covers the third bondingpad 22 and fourth bonding pad 23;

Step d. aligning the first bonding pad 112 and the second bonding pad113 of the semiconductor die 1 to the third bonding pad 22 and thefourth bonding pad 23 of the carrier 2 respectively;

Step e. curing the conductive agent to form a conductive connectinglayer 3 comprising a current conductive area 31 and a current blockingarea 32 between the surfaces 111 and 21, wherein the current conductivearea 31 locates between the first bonding pad 112 and third bonding pad22, and between the second bonding pad 113 and the fourth bonding pad23, and the current blocking area 32 is formed between the surfaces 111and 21 and locates outside of the current conductive area 31.

Preferably, in the above step c, the conductive agent continuouslycovers the first bonding pad 112, the second bonding pad 113, and thetop surface 111 of the semiconductor die 1 between the first bonding pad112 and the second bonding pad 113 at the same time. Alternatively, theconductive agent continuously covers the third bonding pad 22, thefourth bonding pad 23, and the connecting surface 21 of the carrier 2between the third bonding pad 22 and the fourth bonding pad 23 at thesame time. It is convenient and simple to continuously cover the aboveelements. The method described above is suitable to decrease theshortest distance between the first bonding pad 112 and the secondbonding pad 113 to 15˜150 μm in order to meet the requirement of acompact semiconductor device 100. In the above step c, the conductiveagent is coated to the first bonding pad 112 and the second bonding pad113 with separate areas respectively by utilizing a printing plate withopenings. In the embodiment of the present disclosure, the tolerance ofaligning the openings of the printing plate to the first bonding pad 112or the second bonding pad 113 is larger, and the yield loss caused bythe poor alignment can be effectively reduced. Therefore, the yield ofproducing the semiconductor device 100 with compact size can be improvedwhen utilizing the printing plate in the method. Furthermore, in theabove step e, the conductive agent can be cured by various ways, such asheating, cooling, or adding the material which can initiate the curingeffect. If necessary, an appropriate physical property, such aspressure, can also be applied to the conductive agent. As long as theconductive agent is cured and forms the current conductive area 31 inthe area described above, any possible modifications without departingfrom the spirit of the disclosure should be covered by the disclosure.

The step e comprises curing the conductive agent or a conductive film byheating and pressurizing at the same time when manufacturing thesemiconductor device 100 in the first embodiment. In FIGS. 2 and 7, thecurrent conductive area 31 and the current blocking area 32 are formedby curing the conductive agent in the semiconductor device 100 of thefirst embodiment. The content of the conductive material C1 in thecurrent conductive area 31 is between 7% and 75%, and the content of theconductive material C1 in the current blocking area 32 is between 2% to50%. The conductive agent comprises a conductive material C1 and aninsulating material I1, and the properties of them are described above.Briefly, the insulating material I1 in the embodiment is a thermosettingmaterial having a curing temperature, and the melting point of theconductive material C1 is higher than the curing temperature of theinsulating material I1, and preferably, the curing temperature of theinsulating material I1 is higher than the room temperature so that theconductive agent is fluid at the room temperature. The conductivematerial C1 and the insulating material I1 are evenly mixed togetherbefore curing the conductive agent; and then, the top surface 111 of thesemiconductor die 1 and the connecting surface 21 of the carrier 2 arecloser to each other by applying a pressure on them. At this time, sincea distance between the first bonding pad 112 and the third bonding pad22 is smaller than a distance between the top surface 111 of thesemiconductor die 1 and the connecting surface 21 of the carrier 2, or adistance between the second bonding pad 113 and the fourth bonding pad23 is smaller than that between the top surface 111 of the semiconductordie 1 and the connecting surface 21 of the carrier 2, the conductiveagent in the current conductive area 31 is firstly surrounded by thebonding pads 112, 22 and 113, 23. Therefore, the volume of theconductive agent is reduced and a current conductive path is formedbetween the first bonding pad 112 and the third bonding pad 22 alignedwith the first bonding pad 112 by contacting the conductive material C1deposited therebetween. Also, a current conductive path is formedbetween the second bonding pad 113 and the fourth bonding pad 23 alignedwith the third bonding pad 113 by contacting the conductive material C1deposited therebetween. Thus, the current conductive area 31 is formed.The current blocking area 32 has larger space than the currentconductive area 31 since the current blocking area 32 is devoid of thebonding pads 112, 113, 22 and 23 protruding from the surfaces 111, 21.The conductive material C1 disperses in the current blocking area 32without forming continuous current conductive path between the bondingpads 112 and 113, 22 and 23, and therefore, the current is unable toflow within the current blocking area 32. The insulating material I1 iscured and confines the conductive material C1 when heating theconductive agent to a temperature higher than the curing temperature ofthe insulating material I1. Thus, the dispersity of the conductivematerial C1 in the current conductive area 31 and the current blockingarea 32 is fixed. In another embodiment, the conductive agent can bereplaced by conductive film (not shown). The conductive film presentssolid state at room temperature and comprises a conductive material andan insulating material like the conductive agent described above.However, the difference between the conductive agent and the conductivefilm is that, the insulating material in the conductive film isthermoplastic material and has a melting point higher than roomtemperature, and the conductive film is shaped as a solid sheet. In theembodiment, the step e further comprises heating the insulating materialto melt it, and pressurizing the first bonding pad 22 and the thirdbonding pad 112, and the second bonding pad 23 and the fourth bondingpad 113 in order to form a current conductive path in the currentconductive area 31. Then, the insulating material is cooled to atemperature lower than the melting point of the insulating material tocure the conductive film again, thus the dispersity of the conductivematerial in the current conductive area 31 and the current blocking area32 is fixed. The conductive film comprises the melting point, such asbetween 140° C. and 200° C. Moreover, the structural strength of thesemiconductor device 100 can be enhanced and the undesirable currentconduction can be avoided when the insulating material fills in thecurrent blocking area 32. Besides, the cracks and damages of thesemiconductor die 1 caused by a stress occurred on the void between thebonding pads, 112, 113, 22, 23 during the manufacturing process can beprevented. Besides, when the conductive material C1 is a core-shellstructure and comprises a conductive core and an insulating layercovering the conductive core, the insulating layer can be fractured bypressurizing and curing the conductive agent, and the conductive core isexposed and contacts first bonding pad 112 and the second bonding pad22. In this way, not only the conductive material C1 could evenlydisperse in the insulating material I1 before curing the conductiveagent, but the undesirable conductive can be avoided along thehorizontal direction where is devoid of being pressurized when curingthe conductive agent.

The step e comprises curing the conductive agent or conductive film byheating when manufacturing the semiconductor device 100 in the secondembodiment. The pressurizing procedure can be added to the methoddepending on the situation. In FIGS. 3 and 7, the conductive agentcomprises a conductive material C2 and an insulating material I2. Themelting point of the conductive material C2 is lower than the curingtemperature of the insulating material I2, and the properties of theconductive material C2 and the insulating material I2 are describedabove. The current conductive area 31 and the current blocking area 32are formed after curing the conductive agent based on the property ofthe conductive agent in the present embodiment. More specifically, theconductive material C2 and the insulating material I2 are evenly mixedtogether before curing the conductive agent, and a structure of theconductive material C2 comprises grain shape. Then, the conductive agentis coated between the top surfaces 111 and the connecting surface 21,and the conductive agent preferably continuously covers the firstbonding pad 112, the second bonding pad 113, and the top surface 111 ofthe semiconductor die 1 between the first bonding pad 112 and the secondbonding pad 113. Alternatively, the conductive agent continuously coversthe third bonding pad 22, the fourth bonding pad 23 and the connectingsurface 21 of the carrier 2 between the third bonding pad 22 and thefourth bonding pad 23. After that, the conductive agent is heated to atemperature higher than the melting point of the conductive material C2.For example, the heating temperature is between 140 and 180° C. Sincethe materials of the bonding pads 112, 113, 22, 23 and the conductivematerial C2 are metal or alloy and the conductive material C2 can havegood wetting property with the material of the bonding pads 112, 113,22, 23, the conductive material C2 can freely flow within the conductiveagent and be attracted to gather between the first bonding pad 112 andthe third bonding pad 22, and between the second bonding pad 113 and thefourth bonding pad 23 when the heating temperature is above the meltingpoint of the conductive material C2 and below the curing temperature ofthe insulating material I2. In other words, before curing step, thestructure of the conductive material C2 have grain shape, and thenmultiple structure of conductive material C2 are melted and gathered toform a bulk shape. Thus, the content of the conductive material C2 inthe current conductive area 31 is higher than 75%. However, the contentof the conductive material C2 in the area outside of the currentconductive area 31 is lower since the conductive material C2 flow andgather to the current conductive area 31. In the present embodiment, thecontent of the conductive material C2 in the current blocking area 32 isbetween 0.1% and 40%, while the content of the insulating material I2 inthe current blocking area is between 60% and 99.9%. Then, curing theinsulating material I2 by heating the conductive agent to a temperaturehigher than the curing temperature of the insulating material I2. Theconductive material C2 is already gathered between the first bonding pad112 and the third bonding pad 22, and between the second bonding pad 113and the fourth bonding pad 23 in the previous step. The dispersity ofthe conductive material C2 in the current conductive area 31 and thecurrent blocking area 32 is fixed since the cured insulating material I2can confine a flow region of the melted conductive material C2.

As FIGS. 6 and 7 show, in the step c of the method for manufacturing thesemiconductor device 100 in the fourth embodiment, the conductive agentpreferably continuously covers the first bonding pad 112, the secondbonding pad 113 of the semiconductor die 1 and the top surface 111therebetween, or the conductive agent continuously covers the thirdbonding pad 22, the fourth bonding pad 23 and the connecting surface 21of the carrier 2. The step d comprises aligning the semiconductor die 1and the carrier 2 while the second side surface 115 faces the connectingsurface 21 of the carrier 2. Under the circumstances, the conductiveagent covers the second side surface 115, and the side surfaces of thefirst bonding pad 112 and the second bonding pad 113 connect to thesurfaces of the third bonding pad 22 and the fourth bonding pad 23respectively. The first angle θ1 is formed between the first normaldirection a1 of the first bonding surface 112 a and second normaldirection a2 of the second bonding surface 22 a. The conductive agentcovers the second side surface 115 of the semiconductor die 1 and thecarrier 21. In step e, the conductive agent is cured by heating to 140°C.˜180° C. The conductive agent comprises the conductive material C3 andthe insulating material I3, which is similar with the conductive agentin the second embodiment. Since good surface wetting property betweenthe conductive material C3 and the bonding pads 112, 113, 22 and 23, theconductive grains of the conductive material C3 are heated and gatheredtogether to form a bulk between the first bonding pad 112 and the thirdbonding pad 22, and between the second bonding pad 113 and the fourthbonding pad 23. After that, the insulating material I3 is cured by beingheated to a temperature higher than the curing temperature. In this way,most of the conductive material C3 is confined between the first bondingpad 112 and the third bonding pad 22, and between the second bonding pad113 and the fourth bonding pad 23, and therefore the current conductivearea 32 is formed.

FIG. 8 shows a cross section of a semiconductor device 100 in accordancewith the fifth embodiment of the present disclosure. The semiconductordevice 100 comprises a plurality of semiconductor dies 1 and a carrier2, wherein the plurality of semiconductor dies 1 are light-emittingdies. More specifically, the semiconductor device 100 comprises thecarrier 2, a first light-emitting die 1, a second light-emitting chip 4,a third light-emitting chip 5 and a reflecting wall 26 projected from aconnecting surface 21 of the carrier 2 and having similarlight-reflecting properties with reflective wall 24 described above. Thereflecting wall 26 surrounds the first light-emitting die 1, the secondlight-emitting chip 4 and the third light-emitting chip 5. Thestructures of the first light-emitting die 1, the second light-emittingchip 4 and the third light-emitting chip 5 are similar with thesemiconductor die 1 in the first and second embodiments. Three pairs ofthe third bonding pad 22 and the fourth bonding pad 23 are deposited onthe connecting surface 21 of the carrier 2. The bonding pads 112, 113 ofthe first light-emitting die 1 connect to one pair of the third bondingpad 22 and the fourth bonding pad 23 on the connecting surface 21 of thecarrier 2 by the method disclosed in the first and second embodiments.The second light-emitting chip 4 and the third light-emitting chip 5also locate on the connecting surface 21 of the carrier 2. The twobonding pads of the second light-emitting chip 4 and the thirdlight-emitting chip 5 can be connected to the other two pairs of thethird bonding pad 22 and the fourth bonding pad 23 on the connectingsurface 21 of the carrier 2 by the method disclosed in the first andsecond embodiments. Alternatively, the two bonding pads of the secondlight-emitting chip 4 and the third light-emitting chip 5 can beconnected to the other two pairs of the third bonding pad 22 and thefourth bonding pad 23 on the connecting surface 21 of the carrier 2 bymetal bonding method. Therefore, the electrical connection is formedamong the carrier 2, the first light-emitting die 1, the secondlight-emitting chip 4, and the third light-emitting chip 5. The firstlight-emitting die 1, the second light-emitting chip 4, and the thirdlight-emitting chip 5 emit a first light, a second light, and a thirdlight respectively when current flows among the carrier 2 and the firstlight-emitting die 1, the second light-emitting chip 4, and the thirdlight-emitting chip 5. The first light, the second light, and the thirdlight generate white light when mixing together. The secondlight-emitting chip 4 shown in FIG. 8 comprises a first light-emittingdie 1 emitting a first light and a second wavelength converting layer 41formed on a light-extraction face of the first light-emitting die 1. Thethird light-emitting chip 5 comprises a first light-emitting die 1emitting a first light and a third wavelength converting layer 51 formedon a light-extraction face of the first light-emitting die 1. In theembodiment, all of the first light-emitting die 1, the secondlight-emitting chip 4, and the third light-emitting chip 5 connect tothe carrier 2 by the conductive agent, wherein the first light-emittingdie 1, the second light-emitting chip 4, and the third light-emittingchip 5 are preferably devoid of substrate structure and bond to thecarrier 2 by a flip-chip bonding form. The structure of thelight-emitting die 1 will be described later. In one embodiment, thefirst light emitted by the first light-emitting die 1 is blue light. Thesecond wavelength converting layer 41 of the second light-emitting chip4 comprise a material which is able to convert the blue light to a greenlight, such as phosphors or quantum dots, and the second light describedabove is the green light. The third wavelength converting layer 51 ofthe third light-emitting chip 5 comprise a material which is able toconvert the blue light to a red light, such as phosphors or quantumdots, and the third light described above is the red light. It should benoted that, the semiconductor device 100 optionally compriseslight-blocking walls B surround the second light-emitting chip 4 and thethird light-emitting chip 5 respectively. More specifically, thelight-blocking wall B surrounds a side wall of a stacking structure ofthe second light-emitting chip 4 and the second wavelength convertinglayer 41, and the light-blocking wall B surrounds a side wall of astacking structure of the third light-emitting chip 5 and the thirdwavelength converting layer 51. In this way, the wavelength conversionefficiency for the light emitted by the second light-emitting chip 4through being converted by the second wavelength converting layer 41,and the wavelength conversion efficiency for the light emitted by thethird light-emitting chip 5 through being converted by the thirdwavelength converting layer 51 can be enhanced. Besides, thelight-blocking wall B could avoid the first light from leaking out fromthe side of the second light-emitting chip 4 to excite the neighboringthird light-emitting chip 5, or avoid the first light from leaking outfrom the side of the third light-emitting chip 5 to excite theneighboring second light-emitting chip 4. Therefore, an undesirablemixing of lights can be avoided.

FIG. 9 shows a cross section of a semiconductor device 100 in accordancewith the sixth embodiment of the present disclosure. Similar with FIG.8, the first light-emitting die 1 and the second light-emitting chip 4connect to the carrier 2 by the method disclosed in the first and secondembodiments. The third light-emitting chip 5 in the present embodimentis a vertical structure, which is different from the embodiment shown inFIG. 8. The third light-emitting chip 5 comprises a first electrode 52and a second electrode 53, and the first electrode 52 and a secondelectrode 53 locate on the opposite sides of the third light-emittingchip 5. The second electrode 53 connects to a bonding pad P1 on thecarrier 2 by the method disclosed in the first and second embodiments,while the first electrode 52 electrically connects to a bonding pad P2on the carrier 2 through a metal line 54 by the method of face-up wirebonding. Alternatively, in another embodiment, the third light-emittingchip 5 is a horizontal structure and comprises a first electrode 52 anda second electrode 53 locate on the same side of the light-emitting chip5, and the first electrode 52 and the second electrode 53 electricallyconnect to the bonding pads on the carrier 2 through two metal lines bythe method of face-up wire bonding. The first light-emitting die 1, thesecond light-emitting chip 4, and the third light-emitting chip 5 emit afirst light, a second light, and a third light respectively, and a whitelight can be generated by mixing the first light, the second light, andthe third light. The second light-emitting chip 4 comprises a firstlight-emitting die 1 emitting the first light and a second wavelengthconverting layer 41 formed on a light-extraction face of the firstlight-emitting die 1. The third light-emitting chip 5 is devoid of athird wavelength converting layer 51 and emits the third light. Forexample, the first light is blue light, the second light is green light,and the third light is red light. In one embodiment, a concave is formedby being surrounded by the reflecting wall 26 and the connecting surface21 of the carrier 2, and a transparent body 6 is filled in the concaveto protect the light-emitting dies 1, 4 and 5. The transparent body 6can but is not limited to be epoxy, acrylic resin, silicon or thecombination thereof. In another embodiment, the material of thetransparent body 6 is the same with the insulating materials I1, I2 inthe conductive agent and therefore the coefficient of thermal expansionof the transparent body 6 is the same with the insulating materials I1,I2. Under the circumstances, the light-emitting dies 1, 4 and 5 connectto the carrier 2 with higher stability since a stress caused by theexpansion or shrink of the transparent body 6 and the conductive agentwhen operating the semiconductor device 100 can be eliminated.

FIG. 10 shows a top view of a light-emitting module 200 including thesemiconductor device 100 disclosed in the present disclosure. Thelight-emitting module 200 comprises a plurality of the semiconductordevices 100 shown in FIG. 8 and/or 9. In the embodiment, the pluralityof the semiconductor device 100 comprises a common carrier 2 and beingarranged to form a two dimensional array. The plurality of thesemiconductor devices 100 connect to each other via the reflecting wall26. The concave surrounded by reflecting wall 26 of the semiconductordevice 100 could be circle as shown in the present embodiment, square,or slit depending on the application of the light-emitting module 200.The single concave surrounded by the reflecting wall 26 comprises aconcave area D, and the concave area D is preferably between 1 and 20mm². The light-emitting module 200 can be further applied to displaydevice, such as television screen, cell phone screen, digital billboard,sporting digital signage and so on. The light-emitting module 200comprises a plurality of the semiconductor device 100 and each of thesemiconductor devices 100 is designated to be a pixel. The amount, colorand arrangement of the semiconductor device 100 and the distance betweenneighboring semiconductor devices 100 affect the visual property whenthe user watches the display device. For example, the display device hashigher resolution by utilizing the semiconductor device 100 with smallsize, since the display device accommodates much amount of thesemiconductor device 100 with small size than the semiconductor device100 with large size.

FIGS. 11 and 12 show another light-emitting module 300 including thesemiconductor device 100 disclosed in the present disclosure. In thepresent embodiment, the light-emitting module 300 is an edge-typelight-emitting module and comprises the semiconductor device 100 asshown in FIGS. 5 and 6 of the fourth embodiment, a light guiding board301, and a diffusion board 302. The light-emitting module 300 comprisesa plurality of the semiconductor devices 100. The main light-extractionsurface 116 of the semiconductor die 1 is opposite to the top surface111 with the first bonding pad 112, and the main light-extractionsurface 116 locates between the side surface 114 and the second sidesurface 115. The light guiding board 301 comprises a light-extractionsurface 301 a and two side surface 301 b connecting to thelight-extraction surface 301 a. Each of the plurality of thesemiconductor devices 100 connects to the light guiding board 301 whilethe main light-extraction surface 116 faces to the two side surface 301b of the light guiding board 301. The diffusion board 302 locates on thelight-extraction surface 301 a of the light guiding board 301. The lightemitted from the light-extraction surface 301 a by the semiconductor die1 proceeds to side surface 301 b of the light guiding board 301. Then,the light guiding board 301 guides the light proceeding toward thelight-extraction surface 301 a and entering the diffusion board 302 inorder to evenly disperse the light by the diffusion board 302. Thelight-emitting module 300 preferably comprises a reflective layer 303connecting to a surface of the light guiding board 301 which is oppositeto the light-extraction surface 301 a. The reflective layer 303 reflectsthe light to the diffusion board 302, and hence, the light uniformity ofthe light-emitting module 300 can be increased. The light-emittingmodule 300 further comprises a supporting board 304. The reflectivelayer 303, the light guiding board 301, the diffusion board 302 and thesemiconductor devices 100 locate on the supporting board 304. FIG. 12 isa three-dimensional view of the light-emitting module 300 shown in FIG.11. The semiconductor device 100 comprises a plurality of thesemiconductor dies 1 on the carrier 2, and the plurality of thesemiconductor dies 1 arranges along the side surface 301 b of the lightguiding board 301 and forms a one-dimensional array. Nevertheless, theamount and the arrangement of the semiconductor die 1 of thelight-emitting module 300 in the disclosure are not limited to thestructure shown in FIG. 12.

FIG. 13 shows a cross section of a semiconductor die 1 incorporated inthe semiconductor device 100 disclosed in the present disclosure. Thesemiconductor die 1 can be a flip-chip type light-emitting element. Thesemiconductor die 1 in the present embodiment can be the semiconductordie 1 shown in FIGS. 1-6, the first light-emitting die 1 and the secondlight-emitting chip 4 shown in FIGS. 8-9, and the third light-emittingchip 5 shown in FIG. 8. More specifically, the semiconductor die 1comprises the stacking structure 11, a first bonding pad 112 and thesecond bonding pad 113 on the top surface 111 of the stacking structure11. The stacking structure 11 comprises a substrate 121 and asemiconductor stack 122. The substrate 121 is designated to support andcarry the semiconductor stack 122. The first bonding pad 112 and thesecond bonding pad 113 locate on the same side of the semiconductorstack 122 and form a horizontal type semiconductor structure. In oneembodiment, the semiconductor stack 122 is among the bonding pads 112,113, and the substrate 121. The substrate 121 is a transparentsubstrate. After the semiconductor die 1 connects to the carrier 2, thesemiconductor die 1 can emit light from the substrate 121. Thetransparent substrate comprises but is not limited to sapphire, glass,quartz or other transparent materials.

The semiconductor stack 122 comprises a first semiconductor layer 122 a,a second semiconductor layer 122 b, and an active layer 122 c formedbetween the first semiconductor layer 122 a and the second semiconductorlayer 122 b. The second semiconductor layer 122 b, the active layer 122c, and the first semiconductor layer 122 a sequentially form on thesubstrate 121. The semiconductor stack 122 can be epitaxially grown onthe substrate 121. Alternatively, the semiconductor stack 122 isepitaxially grown on a growth substrate, being bonded to the substrate121, and then the growth substrate is removed through substrate transfertechnology. In another embodiment, after the semiconductor stack 122 isepitaxially grown on a growth substrate, the growth substrate isremoved. Therefore, the stacking structure 11 which is devoid of anysubstrate is produced, and the kind of the semiconductor die 1 withthinner thickness can meet the requirement of thinner-deviceapplication. For example, the semiconductor die 1 is suitable for backlight source of mobile device. The semiconductor stack 122 can beepitaxially grown on the growth substrate by metal organic chemicalvapor deposition (MOCVD), molecular beam epitaxy (MBE), physical vapordeposition (PVD) or other methods. The first semiconductor layer 122 aand the second semiconductor layer 122 b comprise a first conductivetype and a second conductive type respectively. The active layer 122 ccan be a single heterostructure (SH), a double heterostructure (DH), ora multi-quantum well structure (MQW). The first bonding pad 112 and thesecond bonding pad 113 locate on the first semiconductor layer 122 a andthe second semiconductor layer 122 b respectively. The above transparentsubstrate comprises a material having a band gap higher than a band gapof the active layer 122 c and has a high transparency to the lightemitted by the active layer 122 c. When the semiconductor stack 122bonds to the substrate 121 by substrate transfer technology, atransparent adhesive layer (not shown) inserts between the substrate 121and the semiconductor stack 122, and the transparent adhesive layer canbe an organic polymer or an inorganic material, such as oxide, nitrideor fluoride.

In FIG. 13, the stacking structure 11 further comprises a reflectivelayer 15 on the first semiconductor layer 122 a and an insulating layer16 on the reflective layer 15. The semiconductor die 1 further comprisesa first channel 13 and a second channel 14, wherein the first channel 13is formed by removing a part of the insulating layer 16 and exposing thereflective layer 15. The second channel 14 is formed by removing anactive layer 122 c, a first semiconductor layer 122 a, a reflectivelayer 15 and the insulating layer 16 to expose the second semiconductorlayer 122 b. The first bonding pad 112 electrically connects to thefirst semiconductor layer 122 a through the first channel 13, and thesecond bonding pad 113 electrically connects to the second semiconductorlayer 122 b through the second channel 14. An opening area of theinsulating layer 16 on the first channel 13 is smaller than an area ofthe first bonding pad 112, and an opening area of the insulating layer16 on the second channel 14 is smaller than an area of the secondbonding pad 113. More specifically, the first bonding pad 112 and thesecond bonding pad 113 electrically connect to the first semiconductorlayer 122 a and the second semiconductor layer 122 b through the firstchannel 13 and the second channel 14 respectively. A contacting area ofthe first bonding pad 112 and the semiconductor stack 11 through theopening of the insulating layer 16, and a contacting area of the secondbonding pad 113 and the semiconductor stack 11 through the opening ofthe insulating layer 16 are smaller than the areas of the first bondingpad 112 and the second bonding pad 113 respectively. A current can beintroduced into the semiconductor die 1 through the first bonding pad112 and the second bonding pad 113 with larger sizes, and therefore, theheat dissipation of the semiconductor die 1 can be increased. Thereflective layer 16 is designated to reflect the light emitted from theactive layer 122 c toward the first semiconductor layer 122 a to thedirection of the substrate 121, and the light-extraction efficiency ofthe semiconductor die 1 can be enhanced. The structure of thesemiconductor die 1 described above is only for illustration and doesnot intend to limit the structure of the semiconductor die 1. Anypossible modifications without departing from the spirit of thedisclosure should be covered by the disclosure as long as the shortestdistance between the first bonding pad 112 and the second bonding pad113 of the semiconductor die 1 is less than 150 μm.

FIG. 14 shows a cross section of another semiconductor die 1′incorporated in the semiconductor device 100 disclosed in the presentdisclosure. The semiconductor die 1′ comprises package material and isformed by chip-scale-package (CSP). The semiconductor die 1′ comprises asemiconductor die 1 shown in FIG. 13, a first bonding pad 112, and asecond bonding pad 113 on a top surface 111. The first bonding pad 112comprises a first metal extending part 112E comprising a first end 112Textending toward the second bonding pad 113. The second bonding pad 113comprises a second metal extending part 113E comprising a second end113T extending toward the first bonding pad 112. A shortest distance dbetween the first end 112 T of the first bonding pad 112 and the secondend 113T of the second bonding pad 113 is less than 150 μm. Thesemiconductor die 1′ further comprises a package body 19 covering thesemiconductor die 1. The first metal extending part 112E and the secondmetal extending part 113E protrude to the top surface 111 of thesemiconductor die 1 and extend to the package body 19. A mainlight-extraction surface 116′ is opposite to the top surface 111 of thesemiconductor die 1. The package body 19 optionally comprises awavelength conversion element 191, which can be excited by the light ofthe semiconductor die 1 and transfer the light to a light with differentwavelength. The package body 19 comprises epoxy, silicone, polyimide(PI), benzocyclobutene (BCB), perfluorocyclobutyl (PFCB), Su8, acrylicresin, poly(methyl methacrylate) (PMMA), polyethylene terephthalate(PET), polycarbonate (PC) or polyetherimide. The wavelength conversionelement 191 comprises one or two kinds of inorganic phosphor, organicfluorescent colorant, semiconductor or the combination. The inorganicphosphor comprises but is not limited to be a yellow-green phosphor or ared phosphor. The composition of the yellow-green phosphor can bealuminum oxide (YAG or TAG), silicate, vanadate, alkaline earth metalselenide or metal nitride. The composition of the red phosphor can befluoride (K₂TiF₆:Mn⁴⁺, K₂SiF₆:Mn⁴⁺), silicate, vanadate, alkaline earthmetal sulfide, metal oxy-nitride, tungsten molybdate group mixture. Thesemiconductor comprises a semiconductor material with nano crystal, suchas quantum-dot light-emitting material. The quantum-dot light-emittingmaterial can be ZnS, ZnSe, ZnTe, ZnO, CdS, CdSe, CdTe, GaN, GaP, GaSe,GaS, GaAs, AlN, AlP, AlAs, InP, InAs, Te, PbS, InSb, PbTe, PbSe, SbTe,ZnCdSeS, CuInS, CsPbCl₃, CsPbBr₃ and CsPbI₃. The semiconductor die 1′ inthe embodiment further comprises a reflective layer 15 on the topsurface 111, the first bonding pad 112 and the second bonding pad 113,which is similar with the semiconductor die 1 in the first embodiment.The first metal extending part 112E connects to the first bonding pad112 through an opening of the reflective layer 15, and the second metalextending part 113E connects to the second bonding pad 113 throughanother opening of the reflective layer 15. However, the reflectivelayer 15 is insulating material in the present embodiment and reflectsthe light of the semiconductor die 1′ toward the top surface 111 to thedirection toward the main light-extraction surface 116′ and the packagebody 19.

The boundary of the current conductive area 31 described above is acontinuous outer edge formed by continuous connection of the conductivematerial C1, C2 or C3 which close to the outer side of the currentconductive area 31, such as the black bold line shown in FIG. 2. Theboundary of the current blocking area 32 described above is a continuousouter edge formed by continuous connection of the insulating materialwhich close to the outer side of the current blocking area 32. The totalareas of the conductive material C1, C2, C3 and the specific area suchas the current conducive area 31 or the current blocking area 32 can becalculated by the cross-section microscopic image of the semiconductordevice 100, and the calculation can be automatically practiced bycomputer software.

It should be noted that the proposed various embodiments are forexplanation but not for the purpose to limit the scope of thedisclosure. Any possible modifications without departing from the spiritof the disclosure may be made and should be covered by the disclosure.The similar or same elements or the elements with the same referencenumeral in different embodiments have identical chemical or physicalcharacters. Besides, the elements shown in different embodimentsdescribed above could be combined or replaced with one another in propersituation. The connecting relationship of specific element particularlydescribed in one embodiment could also be applied in another embodiment,and the subject matter which comprises the elements in differentembodiments all fall within the scope of the following claims and theirequivalents.

What is claimed is:
 1. A semiconductor device, comprising, asemiconductor die comprising a stacking structure, a first bonding padwith a flat top side in a cross-sectional view, positioned away from thestacking structure, and a second bonding pad, wherein a shortestdistance between the first bonding pad and the second bonding pad isless than 150 microns; a carrier comprising a connecting surface; athird bonding pad and a fourth bonding pad on the connecting surface ofthe carrier; and a conductive connecting layer comprising a firstconductive part formed between the first bonding pad and the thirdbonding pad, and comprising a first conductive material having a firstshape with a width; a second conductive part formed between the secondbonding pad and the fourth bonding pad, and comprising the firstconductive material; and a blocking part covering the first conductivepart and comprising a second conductive material having a second shapewith a diameter less than the width in the cross-sectional view, whereinthe first shape has a height greater than the diameter, and wherein thefirst conductive part fully covers the top flat side in thecross-sectional view.
 2. The semiconductor device of claim 1, whereinthe conductive connecting layer comprises an insulating material.
 3. Thesemiconductor device of claim 2, wherein the blocking part is formedoutside of the first conductive part and the second conductive part, anda first percentage of a total area of the second conductive material inthe blocking part is less than a second percentage of a total area ofthe first conductive material in the first conductive part and thesecond conductive part in the cross-sectional view.
 4. The semiconductordevice of claim 3, wherein the second percentage is between 8% and 75%.5. The semiconductor device of claim 3, wherein the first percentage isbetween 2% and 50%.
 6. The semiconductor device of claim 3, wherein thefirst percentage is between 0.1% and 40%.
 7. The semiconductor device ofclaim 2, wherein the insulating material comprises a thermosettingmaterial.
 8. The semiconductor device of claim 1, wherein the stackingstructure comprises a semiconductor stack, and the semiconductor diecomprises a first channel and a second channel, and the first bondingpad and the second bonding pad connect to the semiconductor stackthrough the first channel and the second channel respectively, whereincontacting areas of the first bonding pad and the semiconductor stackand between the second bonding pad and the semiconductor stack are lessthan areas of the first bonding pad and the second bonding padrespectively.
 9. The semiconductor device of claim 1, wherein theshortest distance is between 15 and 100 μm.
 10. The semiconductor deviceof claim 1, wherein the shortest distance is more than or equal todouble of the diameter.
 11. The semiconductor device of claim 1, whereinat least one of the first conductive material and the second conductivematerial comprises a metal alloy composed of at least two elements ofbismuth (Bi), tin (Sn), silver (Ag) or indium (In).
 12. Thesemiconductor device of claim 1, wherein at least one of the firstconductive material and the second conductive material comprises a firstmetal and a second metal with a melting point higher than that of thefirst metal, and a weight percentage of the first metal is less thanthat of the second metal.
 13. The semiconductor device of claim 1,further comprising a reflective wall protruding from and connecting tothe connecting surface of the carrier, the reflecting wall defining aconcave in which the semiconductor die is located.
 14. The semiconductordevice of claim 1, wherein semiconductor die has an operation currentless than 10 mA.
 15. The semiconductor device of claim 1, wherein thefirst bonding pad comprises a first bonding surface and a first normaldirection perpendicular to the first bonding surface, and the thirdbonding pad comprises a second bonding surface and a second normaldirection perpendicular to the second bonding surface, and wherein thefirst normal direction is substantially parallel with the second normaldirection.
 16. The semiconductor device of claim 1, wherein the firstbonding pad comprises a first bonding surface and a first normaldirection perpendicular to the first bonding surface, and the thirdbonding pad comprises a second bonding surface and a second normaldirection perpendicular to the second bonding surface, and wherein afirst angle formed between the first normal direction and the secondnormal direction is not 180 degrees.
 17. The semiconductor device ofclaim 16, wherein the first angle is between 60 and 150 degrees.
 18. Thesemiconductor device of claim 16, wherein the conductive connectinglayer comprises an insulating material.
 19. The semiconductor device ofclaim 18, wherein the blocking part comprises a first insulating partamong the semiconductor die, the connecting surface and the firstconductive part.
 20. The semiconductor device of claim 1, wherein thefirst shape is different from the second shape.